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NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025LSS
DMN3052LSS
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 12
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
7.1
5.7
28
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
??
?
?
?
??
?
?
1
? 80
? 800
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ? 12V, V DS = 0V
V GS = ? 19V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
g fs
V SD
0.62
?
?
?
0.9
24
30
50
10
0.78
1.2
30
40
63
?
1.16
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 7.1A
V GS = 4.5V, I D = 6.4A
V GS = 2.5V, I D = 5.0A
V DS = 5V, I D = 5.1A
V GS = 0V, I S = 2.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
555
109
82
?
?
?
pF
pF
pF
V DS = 5V, V GS = 0V
f = 1.0MHz
Notes:
5.
6.
7.
Device mounted on 2 oz copper pad layout with R ? JA = 50°C/W .
Pulse width ? 10 μ S, Duty Cycle ? 1%.
Short duration pulse test used to minimize self-heating effect.
DMN3052LSS
Document number: DS31583 Rev. 5 - 3
2 of 6
www.diodes.com
December 2013
? Diodes Incorporated
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